рдЦрдирди рдФрд░ рдЦрдиिрдЬ рдЙрдж्рдпोрдЧों рдоें рдкрд░्рдпाрд╡рд░рдгीрдп рд╕्рдеिрд░рддा рд╡िрд╖рдп рдкрд░ рд╡िрд╢ेрд╖рдЬ्рдЮों рдХा рдоंрдерди рдкрд░्рдпाрд╡рд░рдгीрдп рд╕्рдеिрд░рддा рдоाрдирд╡ рд╕рдоाрдЬ рдХे рдиिрд░рди्рддрд░ рдЕрд╕्рддिрдд्рд╡, рд╕рдоृрдж्рдзि рдФрд░ рд╕्рд╡ाрд╕्рде्рдп рдХे рд▓िрдП рдоूрд▓рднूрдд рд╢рд░्рдд рд╣ै। рд╣рдоाрд░ी рди्рдпू рдЬрдирд░ेрд╢рди рдХो рд╕्рдкीрдб рдФрд░ рдЯेрдХ्рдиोрд▓ॉрдЬी рдкрд░ рдз्рдпाрди рдХेंрдж्рд░िрдд рдХрд░рдиा рд╣ोрдЧा рддाрдХि рднрд╡िрд╖्рдп рдХो рд╕ुрдирд╣рд░ा рдмрдиाрдпा рдЬा рд╕рдХे। рдЙрдХ्рдд рд╡िрдЪाрд░ рдоुрдЦ्рдп рдЕрддिрдеि рд╢्рд░ी рдПрдордкी рд╕िंрд╣, рдк्рд░рдзाрди рдоुрдЦ्рдп рдЕрднिрдпंрддा, рдХेंрдж्рд░ीрдп рд╡िрдж्рдпुрдд рдк्рд░ाрдзिрдХрд░рдг рд╡िрдж्рдпुрдд рдоंрдд्рд░ाрд▓рдп рднाрд░рдд рд╕рд░рдХाрд░, рдирдИ рджिрд▓्рд▓ी рдиे рд╡्рдпрдХ्рдд рдХिрдП рд╢्рд░ी рд╕िंрд╣ рднूрдкाрд▓ рдиोрдмрд▓्рд╕ рд╕्рдиाрддрдХोрдд्рддрд░ рдорд╣ाрд╡िрдж्рдпाрд▓рдп рдоें рднूрд╡िрдЬ्рдЮाрди рд╡िрднाрдЧ рдж्рд╡ाрд░ा "рдЦрдирди рдФрд░ рдЦрдиिрдЬ рдЙрдж्рдпोрдЧों рдоें рдкрд░्рдпाрд╡рд░рдгीрдп рд╕्рдеिрд░рддा" рд╡िрд╖рдп рдкрд░ рдЖрдпोрдЬिрдд рджो рджिрд╡рд╕ीрдп рд░ाрд╖्рдЯ्рд░ीрдп рдХॉрди्рдл्рд░ेंрд╕ рдХे рд╕рдоाрдкрди рдкрд░ рдмोрд▓ рд░рд╣े рдеे। рджो рджिрд╡рд╕ीрдп рд░ाрд╖्рдЯ्рд░ीрдп рдХाрди्рдл्рд░ेंрд╕ рдХा рднрд╡्рдп рд╕рдоाрдкрди рд╕рдо्рдоाрдиिрдд рдЕрддिрдеि рдк्рд░ो рд╡िрдиोрдж рдЕрдЧ्рд░рд╡ाрд▓ рд╕рджрд╕्рдп, рднाрд░рдд рд╕рд░рдХाрд░ рдирдИ рджिрд▓्рд▓ी рд╕्рдеिрдд MOEFCC рдХी рд╡िрд╢ेрд╖рдЬ्рдЮ рдоूрд▓्рдпांрдХрди рд╕рдоिрддि, (рд╕ि рдПрдг्рдб рдЯीрдкी) рдЕрдкрдиे рдЙрдж्рдмोрдзрди рдоें рдХрд╣ा рдХि рдкрд░्рдпाрд╡рд░рдг рд╕्рдеिрд░рддा рд╕рд░рдХाрд░ рдФрд░ рд╕рдоाрдЬ рджोрдиों рдХी рдЬिрдо्рдоेрджाрд░ी рд╣ै। рд╡рд░्рддрдоाрди рдоें рдЦрдирди рдЙрдж्рдпोрдЧ рд╡िрднिрди्рди рдк्рд░ाрд╡рдзाрдиों рдПрд╡ं рдХाрдиूрдиों рдХे рддрд╣рдд рдХाрд░्рдп рдХрд░ рд░рд╣ा рд╣ै рддाрдХि рдкрд░्рдпाрд╡рд░рдг рдХो рд╕ुрд░рдХ्рд╖िрдд рд░рдЦा рдЬा рд╕рдХे। рдЖрдпोрдЬрди рд╕рдЪिрд╡ рдбॉ. рд╣ेрдоंрдд рд╕ेрди рди...
MOS Controlled thyristor (MCT)
- It is basically a thyristor with two MOSFETs built into the gate structure.
- One MOSFET is used for turning on the MCT and the other for turning off the device.
- MCT is a high frequency, high power, low-conducting drop switching device.
- A practical MCT consists of thousands of these basic cells connected in parallel just like a power MOSFET.
- This is done to achieve a high current carrying capacity of the device.
Basic structure of MCT

- The equivalent circuit of MCT consists of one on-FET, one off-FET and two transistors.
- The on-FET is a p-channel MOSFET and off-FET is an n-channel MOSFET.
- An arrow towards the gate terminal indicates n-channel MOSFET and the arrow away form the gate terminal is the p-channel MOSFET.
- The two transistor in the equivalent circuit represents that there is regenerative feedback in the MCT just same as in an ordinary thyristor.
(a) Equivalent circuit of MCT and (b) Circuit symbol of MCT
Turn-on process
- An MCT can be turned on by applying a negative voltage pulse at the gate with respect to anode.
- By getting this negative voltage pulse, on-FET gets turned-on and the off-FET is off.
- During this time current begins to flow from anode A, through on-FET and then as the base current (iB) and emitter current (iE) of npn transistor and then to cathode C.
- It turns on transistor and therefore collector current (iC) begins to flow in npn transistor.
- Since off-FET is off, so this iC of npn transistor acts as the iB of pnp transistor, and hence pnp transistor is also turned on.
- When both the transistors are on, the regenerative action of the connection scheme takes place, and the MCT is turned on.
Turn-off process
- For turning-off the MCT, off-FET is energized by positive voltage pulse at the gate with respect to anode.
- So this FET is turned on, and on-FET is tuned off.
- After off-FET is tuned on, either base terminals of pnp transistor are short circuited by it.
- So the anode current begins to flow through off-FET and therefore iB of pnp begins to decrease.
- So iC of pnp transistor that forms the iB also begins to decrease.
- In this way iB of pnp and npn transistors divide storage charge in their n and p bases respectively, begins to decay.
- This regenerative action turns off the MCT.
Advantages of MCT
- MCT has low forward conduction drop.
- The turn-on and turn-off time of MCT is very fast.
- The switching loss of MCT is very low.
- The gate input impedance of MCT is very high.
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