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Power diodes | Power electronics

Power diodes

Introduction of power diode

  • Power diode is a two layer, two terminal, p-n semiconductor diode.
  • The two terminal of diode are called anode and cathode.

Characteristic of power diodes

Circuit diagram for characteristic curve of power diode
  • When diode is positive with respect to cathode, diode is said to be forward biased.
  • With increase of Vs from zero value, initially diode current I is zero.
  • From Vs = 0 to cut-in voltage (threshold voltage or truth-on voltage), the forward diode current is very small.
  • After cut in voltage, the forward diode current increases rapidly and the diode is said to conduct.
  • For Si diode, the value of cut-in voltage is 0.7V
  • When diode conduct, there is a forward voltage drop of the order of 0.8 to 1V.
Characteristic curve of power diode
  • When cathode is positive with respect to anode, the diode is said to be reverse biased.
  • In reverse bias condition, a small reverse current, known as leakage current flow in the circuit and this current is of the order of µA or mA.
  • The value of leakage current increases slowly with the increase in reverse voltage up to breakdown or avalanche voltage.
  • At breakdown voltage, the diode is turned on in the reverse direction.
  • The reverse avalanche breakdown of a diode is avoided by operating the diode below specified peak repetitive reverse voltage VRRM.
  • PIV = peak inverse voltage of a diode.
  • The PIV of a diode is the maximum reverse voltage to which a diode may be subjected during its working. It is same as VRRM.

Diode reverse recovery characteristics

  • After the forward diode current decays to zero, the diode continuous to conduct in the reverse direction, due to the presence of stored charges in the two layers.
  • The reverse current flows for a time called reverse recovery time trr.
Reverse recovery characteristic of power diode

Reverse recovery time (trr)

  • Reverse recovery time is defined as the time between the instant forward diode current becomes zero and the instant reverse recovery current decays to 25% of its reverse peak value IRM.
  • trr = ta + tb
  • ta : The time between zero crossing of forward current and peak reverse current IRM. During this time the charge stored in depletion region is removed.
  • tb : It is measured from the instant of IRM to the instant where 0.25 (or 25%) IRM is reached. During this time the charge from the semiconductor layers is removed.
  • During trr, the stored or reverse recovery charge QR must be removed.

Softness factor or S factor

  • The ratio of  tb and ta is known as softness factor or S-factor.
  • The S factor is a measure of the voltage transient that occur during the time, diode recovers.
  • Usually the value of softness factor is found to be unity, which indicates low oscillatory reverse recovery process.
  • If softness factor is small, then diode has large oscillatory over voltages.
  • If S-factor is 1, the diode is called soft-recovery diode.
  • If S-factor is less than 1, the diode is called or fast recovery diode. or snappy recovery diode.
  • If vf is forward voltage drop across diode, and if is forward current
  • vf x if is power loss in diode
  • Fig (c) shows that major power loss in a diode occurs during tb
  • From fig (a), IRM = ta (di/dt)
  • Here IRM = Peak inverse current, and di/dt = Rate of change of reverse current
  • If we assume that reverse recovery characteristic of fig. (a) is triangular, then
  • QR = ½ IRM x trr ⇒ IRM = 2 (QR / trr)
  • ∵  IRM = ta (di/dt)  and  ta = trr 

  • Thus trr (reverse recovery time) and IRM (peak inverse current) depends on QR (storage charge) and di/dt (rate of change of current)
  • Since QR depends on if (forward diode current)
  • So trr and IRM also depends on if.
  • So a power electronics engineer must know the value of IRM, QR, S-factor and PIV to design the circuit in which power diodes are used.
To know more about this topic please click on https://youtu.be/TjZ4fGWCOZI

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