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चार महीने का बच्चा कैसे बना अरब़पति

चार महीने का बच्चा कैसे बना अरब़पति? जन्म के सिर्फ चार माह बाद यदि कोई बच्चा अरबपति बन जाए तो इसे उसकी किस्मत ही कहेंगे। भारत के एकाग्रह रोहन मूर्ति नाम के बच्चे की किस्मत कुछ इसी प्रकार चमकी है। देश की दूसरी सबसे बड़ी आइटी कम्पनी इंफोसिस के फाउंडर नारायण मूर्ति ने सोमवार अपने चार महीने के पोते एकाग्रह मूर्ति को 240 करोड़ रूपए के शेयरों की हिस्सेदारी का तोहफा देकर उसे शायद देश का सबसे कम उम्र का अरबपति बना दिया है। BSE की फाइलिंग के अनुसार इंफोसिस में अब एकाग्रह रोहन की 15 लाख शेयरों की हिस्सेदारी हो गई है। इसका मतलब अब एकाग्रह रोहन इंफोसिस का 0.04% का हिस्सेदार है। शेयरों के स्थानान्तरण के बाद नारायण मूर्ति के पास कम्पनी के कुल शेयरों का 0.36% हिस्सा बचा है। जिस समय नारायण मूर्ति द्वारा अपने पोते को शेयर देने की खबर बाई उस समय इंफोसिस के शेयरों में गिरावट देखने को मिल रही थी। एकाग्रह रोहन, नारायण मूर्ति तथा सुधा मूर्ति के बेट रोहन मूर्ति और उनकी पत्नि अर्पणा कृष्णन का बेटा है। आपको यह पता होगा कि नोरायण मूर्ति ने अपनी पत्नि सुधा मूर्ति से 10 हजार रूपए उधार लेकर 1981 में इंफोसिस क

Breakdown and resistance of diode | Electronics | Semiconductor diode

Breakdown and resistance of diode

Breakdown of a diode 

  • On applying reverse bias to the diode, two types of breakdown occurs, which are responsible to the sudden increase of current in the reverse bias condition.

Avalanche breakdown

  • In this mechanism, the minority charge carriers gain enough kinetic energy from the applied reverse voltage to collide with the valence electrons of the atom and liberate them.
  • In this process the covalent bond breaks and create a large number of electron-hole pairs.
  • The new charge carriers so produced generate the additional electron-hole pairs.
  • In this way the number of free electrons and holes increases continuously.
  • This phenomenon is known as avalanche multiplication and it produces a sharp increase in the reverse current.
  • The magnitude of avalanche breakdown voltage can be increased by increasing the temperature.

Zener breakdown

  • If the junctions are heavily doped and have a very narrow depletion region, then the breakdown occurs is known as Zener breakdown.
  • Since in this case there exist a high electric field (E = V/d), across the junction.
  • This electric field is so strong to break the covalent bond and generate the electron-hole pairs.
  • On further increasing the Zener voltage, the large number of carriers generate, which increase the reverse current suddenly.
  • This breakdown is a field emission phenomena.
  • On increasing the temperature the Zener breakdown voltage can be decreased.

Resistance of a diode 

 

Static or dc resistance 

  • When only dc current flows through the diode, then the resistance offered by it is static or dc resistance.
  • It is the ratio of the dc voltage across the diode to the dc current flowing through it.
  • Rdc = V / I
  • In forward bias the static resistance of diode is RF and in reverse bias RR.
  • RR >> RF
  • For Ge, RR : RF = 4000 : 1.

Dynamic or ac resistance

  • When only ac current or a small ac current along with dc current flows through the diode, then the resistance offered by it is dynamic or ac resistance.
  • It is reciprocal of the slope of the current-voltage characteristic of the diode.
  • Rac = ΔV / ΔI
  • When the diode is sufficiently forward biased, then at any temperature T

  • Here k = Boltzmann constant, and e = charge of electron.
  • For Ge, η = 1, and at T = 300 K
  • Rac = 26 / I
To know more about breakdown and resistance of diode please click on https://youtu.be/T39lWWPfLFo

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